DSAHI00077179.pdf by International Rectifier

Partial File Text IRFH8202TRPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 1.05 52 1.3 100 V m nC A PQFN 5X6 mm h Applications · OR-ing MOSFET fo
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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