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DSA00207906.pdf
by IXYS
Partial File Text
Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolera
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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851 36 RG 16 26
A114B dimensions
as001
IXTD110N25T-8W
IXTH110
ixth110n25t
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