DSA00208197.pdf by IXYS

Partial File Text High Voltage Power MOSFET IXTH1N250 VDSS ID25 RDS(on) = 2500V = 1.5A 40 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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09 45 845 0001 1N250 1n250 diode 200V TO-247 IXTH1N250