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Partial File Text FLK102XV FÃ¼jrrsu GaAs FET and HEMT Chips FEATURES â¢ â¢ â¢ â¢ High O utput Power: P-|<jB = 30.0dBm (Typ.) High Gain: G -j^B = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Rel
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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