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Partial File Text FLC081XP FÃ¼jrrsu GaAs FET and HEMT Chips FEATURES â¢ â¢ â¢ â¢ High Output Power: P-|<jB = 28.5dBm(Typ.) High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iacjÃ§| = 31.5%(Typ.) Proven Re
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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