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DSAIHSC000133408.pdf
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FLM7785-6F C-Band Internally Matched FET FEATURES ⢠⢠⢠⢠⢠⢠⢠High Output Power: P ^ b = 38.5dBm (Typ.) High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 31% (Typ.) Low
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