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Partial File Text FLM5964-4F C-Band Internally Matched FET FEATURES â¢ â¢ â¢ â¢ High Output Power: P ^ b = 36.5dBm (Typ.) High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po
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