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Scans-00102234.pdf
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 CSF" Insulated Gate Bipolar Transistor IGT4D11,E11 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn
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IGT-4E11
IGT4D11
IGT4E11
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