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    DSAISS0006679.pdf by Central Semiconductor

    • PROCESS CPD104R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side
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