DSAISS0006680.pdf by Central Semiconductor

Partial File Text PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Met
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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