DSAISS0006688.pdf by Central Semiconductor

Partial File Text PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad A
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Obsolete
Price & Stock
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