DSA0074410.pdf by Samsung Electronics

Partial File Text SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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SSF4N90AS

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