DSA0074420.pdf by Samsung Electronics

Partial File Text SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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MTW20N50E 2SK2057 STW20NB50

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