DSA0074498.pdf by Samsung Electronics

Partial File Text NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110 TIP110 TIP110 transistor TIP111 TIP112 TIP112 transistor