DSA00187142.pdf by Chino-Excel Technology

Partial File Text CEM8206 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 6A , RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. D1 D1 D2 D2 8 7 6 5
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