DSA00187159.pdf by Chino-Excel Technology

Partial File Text CES2302 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V , 3.0A , RDS(ON)=55m (typ) @VGS=4.5V. RDS(ON)=82m (typ) @VGS=2.5V. High dense cell design for low RDS(O
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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