DSA00187199.pdf

Partial File Text CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7A , RDS(ON)=30m @VGS=10V. RDS(ON)=50m @VGS=4.5V. Super high dense cell design for extremely low RDS
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSA00187199.pdf preview

Download Datasheet

User Tagged Keywords