DSA00187244.pdf by Chino-Excel Technology

Partial File Text CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 200V , 7.2A , RDS(ON)=300m @VGS=10V Super high dense cell design for extremely low RDS(ON). 6 High power and current
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00187244.pdf preview

Download Datasheet

User Tagged Keywords