DSA00187260.pdf by Chino-Excel Technology

Partial File Text CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS(ON)=1 @VGS=10V. Super high dense cell design for extremely low RDS
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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