DSA00187315.pdf by Chino-Excel Technology

Partial File Text CES7002A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 60V , 0.28A , RDS(ON)=2 @VGS=10V. RDS(ON)=3 @VGS=5V. High dense cell design for low RDS(ON). Rugged and
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