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    DSAZSAA00011463.pdf by Toshiba

    • TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT (2G × 8 BIT) CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712
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