This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
Fuji Hitachi Power Semiconductor Co., Ltd
IGBT Development Dept. Section M l2
<TENTA TIVE>
2 M B I1 0 0 U A -1 2 0 (Target specification)
This material and the information herein is the proper
