DSAUD0010080.pdf by International Rectifier

Partial File Text PD - 9.1237 IRLI640G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Transferred
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IRLI640GPBF

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