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Scans-00104840.pdf
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Insulated-Gate Bipolar Transistors- IGT6D10, IGT6E10 File Number 2125 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 10A, 400V and 500V rDs (on) = 0.27 fi TER
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bipolar transistors
IGT6D10
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Transistor ge 718
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