DSAISS00031039.pdf by International Rectifier
- IRG7PSH54K10DPbF  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  VCES = 1200V  C IC = 65A, TC =100°C tSC ï³ï 10µs, TJ(max) = 150°C G C VC
- Original
- Yes
- Unknown
- Transferred
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