DSAISS00031039.pdf by International Rectifier

Partial File Text IRG7PSH54K10DPbF Â Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Â VCES = 1200V Â C IC = 65A, TC =100Â°C tSC ï³ï 10Âµs, TJ(max) = 150Â°C G C VC
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