DSAISS00031244.pdf by International Rectifier
- IRF7105PbF-1 HEXFET® Power MOSFET N-CH 25 VDS RDS(on) max (@VGS = 10V) Q g (typical) ID (@TA = 25°C) P-CH -25 V 0.1 0.25 Ω 9.4 S1 10 N-CHANNEL MOSFET 1 8
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