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    DSAE0043642.pdf by NEC

    • MOS MOS Field Effect Transistor µ PA1717 P MOS FET µ PA1717 P MOS FET RDS(ON)1 = 33 m VGS =-10 V, ID =-3 A RDS(ON)2 = 59 m VGS =-4.5 V, ID =-3 A Ciss = 830 pF 8
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