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    DSAISS00031367.pdf by International Rectifier

    • IRFH5207PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN
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