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    DSAISS00031372.pdf by International Rectifier

    • IRFH5406PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 14.4 mΩ Qg (typical) 21 nC RG (typical) 1.1 Ω 40 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQF
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