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    DSAISS00031382.pdf by International Rectifier

    • IRLHS6342PbF HEXFET® Power MOSFET VDS 30 V VGS ±12 V RDS(on) max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP
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