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    DSAISS00031479.pdf by International Rectifier

    • IRFH5306PbF HEXFET® Power MOSFET V DS 30 V R DS(on) max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C)
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