DSAISS00031486.pdf by International Rectifier
- IRFHM830PbF HEXFET® Power MOSFET VDS 30 3.8 RDS(on) max (@VGS = 10V) Qg (typical) V m⦠15 2.5 RG (typical) ID 3 S D 7 2 S D 8 ⦠4 G D 6 nC 40
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