DSAISS00031493.pdf by International Rectifier
- IRG7PK35UD1PbF IRG7PK35UD1-EPbF  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  VCES = 1400V  C G G IC = 20A, TC =100°C TJ(max) = 150°C VCE(O
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