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    DSADIGA00020587.pdf by International Rectifier

    • IRFH5302PbF HEXFET® Power MOSFET VDS 30 V 2.1 mΩ Qg (typical) 29 nC RG (typical) 1.6 Ω RDS(on) max (@VGS = 10V) ID (@Tc(Bottom) = 25°C) h 100 A
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