This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
eGaN® FET DATASHEET
EPC2801
EPC2801 â Enhancement Mode Power Transistor
PRELIMINARY
VDSS , 100 V
RDS(ON) , 7 mW
ID , 25 A
High Lead Bump Finish: 95%Pb/5%Sn
EFFICIENT POWER CONVERSION
