DSA0086570.pdf by STMicroelectronics

Partial File Text STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features AEC Q101 compliant 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ESD gate-emitter protection
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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