DSAE0044458.pdf by NEC

Partial File Text MOS MOS Field Effect Transistor 2SK2981 N MOS FET 2SK2981 N MOS FET ON RDS(on)1 = 27 m MAX.VGS = 10 V, ID = 10 A (TO-251) RDS(on)2 = 40 m MAX.VGS = 4.5 V, ID = 10 A
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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