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    DSAE0045665.pdf by NEC

    • MOS MOS Integrated Circuit PD444004L 4M CMOS RAM 1M ×4 PD444004L 4,194,304 1,048,576 ×4 CMOS RAM 3.3 V ± 0.3 V 32 SOJ 1,048,576 ×4 8, 10, 12 ns (MAX.) /OE
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