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    DSAE0046657.pdf by NEC

    • MOS MOS Field Effect Transistor µ PA679TB N / P MOS FET µ PA679TB 2.5 V µ PA679TB mm 2.5 V +0.1 0.2 -0 N RDS(on)1 = 0.57 VGS = 4.5 V, ID = 0.30 A +0.1 0.
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