DSAE0047798.pdf by NEC

Partial File Text MOS MOS Field Effect Transistor µPA1705 N MOS FET µPA1705 N MOS FET DC/DC mm 4.5 V 8 RDS(ON)1 = 19.0 m VGS = 10 V, ID = 4.0 A 5 ; Source 1, 2, 3 ; Gate 4 5,
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PA1705 SOP8 mos n