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    DSAE0047809.pdf by NEC

    • MOS MOS Field Effect Transistor µ PA1708 N MOS FET µ PA1708 N MOS FET 2 DC/DC mm 4.5 V 8 RDS(ON)1 = 18.0 m @VGS = 10 V, ID = 3.5 A 5 1,2,3 ; Source ; Gate 4
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