DSAEDA00062593.pdf

Partial File Text BUL791 NPN SILICON POWER TRANSISTOR G Designed Specifically for High Frequency Electronic Ballasts up to 125 W G hFE 6 to 22 at VCE = 1 V, IC = 2 A G Low Power Losses (On-state and
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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