DSAIH000128583.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE S E M IC O N D U C T O R MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES: HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GldB= 6.5 dB at f = 23 GHz JS8892-AS i
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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