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Partial File Text TOSHIBA MICROWAVE S E M IC O N D U C T O R M IC R O W A V E POWER GaAs FET TECHNICAL DATA FEATURES: HIGH POWER PidB = 27.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6-0 dB at f = 23 GHz i JS8
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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