DSASW00321497.pdf by PanJit International

Partial File Text 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES · RDS(ON), VGS@10V,IDS@500mA=5 · RDS(ON), VGS@4.5V,IDS@75mA=7.5 · Advanced Trench Process Technology · High Density Cell Design For Ultra
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2N7002DW LTA 702 LTA 702 N marking 702 ZE marking sot-363