DSASW00321511.pdf by PanJit International

Partial File Text PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES · RDS(ON), VGS@2.5V,IDS@1mA=7.0 · RDS(ON), VGS@4.0V,IDS@10mA=5.0 · Advanced Trench Process Technology · High Density
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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MARKING GA SOT-363 PJ4N3KDW