DSASW00321516.pdf by PanJit International

Partial File Text PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES · RDS(ON), VGS@10V,IDS@8A=20m · RDS(ON), VGS@5.0V,IDS@6A=31m · Advanced Trench Process Technology · High Density Cell Design For
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