DSAIH000132921.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR M ICROW AVE POWER GaAs FET TECHNICAL DATA FEATURES : LOW INTERM ODULATIO N DISTORTION I M 3 = --45 dBc at Po = 34.5 dBm, Single Carrier Level HIG H POWER
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSAIH000132921.pdf preview Download Datasheet