DSAIH000133156.pdf
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- TOSHIBA MICROWAVE S E M IC O N D U C T O R MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES: HIGH POWER PidB - 33.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN GidB = 6.0 dB at 13.75 GHz to
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